Synthetic-ferrimagnet sense-layer for high density MRAM...

Details Synthetic-ferrimagnet sense-layer for high density MRAM... Synthetic-ferrimagnet sense-layer for high density MRAM...

2005-09-20

2005-09-20

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S241000

Reexamination Certificate

active

06946302

ABSTRACT:
An improved magnetic memory element is provided in which a magnetic sense layer is formed of two ferromagnetic material layers separated by a spacer layer. The two ferromagnetic layers are formed as a synthetic ferrimagnet with stray field coupling and antiferromagnetic exchange coupling across the spacer layer.

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