Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1995-03-27
1996-04-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117929, 423446, C30B 2904
Patent
active
055031048
ABSTRACT:
A method produces a columnar, quasi-oriented diamond that exhibits the enhanced optical, thermal and mechanical properties of gem diamonds. This method allows diamond growth rates that are faster than those possible with high pressure diamond growth from a single diamond seed. The columnar, quasi-oriented diamond contains lower grain boundary density than chemically vapor deposited diamond.
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General Electric Company
Kunemund Robert
Pittman William H.
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