Synthetic diamond heat sink

Chemistry of inorganic compounds – Carbon or compound thereof – Elemental carbon

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C01B 3106

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active

046171819

ABSTRACT:
A synthetic diamond heat sink which can be easily shaped and which ensures a consistently high thermal conductivity in which the diamond is a Type Ib diamond containing 50 to 100 ppm nitrogen. The synthetic diamond crystal has a shape similar to the crystal structure of a hexahedron synthesized by heating a carbon source, a solvent and a diamond seed crystal and the stability region of diamond at a high pressure. The resulting temperature gradient between the carbon source and seed crystal is adjusted to cause diamond growth on the seed crystal. The solvent employed is selected from the group of cobalt, nickel, iron, chromium and manganese. The diamond crystal is caused to grow as the temperature of the solvent is gradually decreased at a rate of 0.15 to 10.degree. C. per hour so that the temperature of the seed crystal and growning diamond crystal is within a range the lower limit of which is a temperature 20.degree. C. higher than the melting point of the solvent and carbon source system and the upper limit of which is a temperature 40.degree. C. higher than the lower limit.

REFERENCES:
patent: 2947609 (1960-08-01), Strong
patent: 4034066 (1977-07-01), Strong
patent: 4042673 (1977-08-01), Strong
Armagnac, "Popular Science", vol. 197, No. 3, 1970, pp. 82, 83, 134, & 137.
Strong, "J. Physical Chemistry", vol. 75, 1971, pp. 1838-1843.
Yamaoka et al, "J. of Crystal Growth", 37, No. 3, 1977, pp. 349-352.

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