Synthetic CMOS static logic gates

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307443, H03K 19017, H03K 19094, H03K 1920

Patent

active

046492968

ABSTRACT:
A multi-input CMOS integrated circuit gate is made with fewer PFETs connected between the source voltage and the output node than there are inputs. In many cases only a single PFET is employed. The inputs are applied through a logic network connected to the gate of the remaining PFET. The gate exhibits reduced parasitic capacitance, better PFET-NFET size ratios, and higher speeds.

REFERENCES:
patent: 3911289 (1975-10-01), Takemoto
patent: 4345170 (1982-08-01), Sampson, III

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