Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-06-05
2007-06-05
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000, C257SE21665, C365S158000, C365S171000, C365S173000, C428S811200
Reexamination Certificate
active
11182149
ABSTRACT:
A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
REFERENCES:
patent: 6197439 (2001-03-01), Parkin
patent: 6518588 (2003-02-01), Parkin
Dave Renu W.
Pietambaram Srinivas V.
Slaughter Jon M.
Sun Jijun
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Huynh Andy
Taylor Earl N.
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