Synthetic anti-parallel spin valve with thin AFM layer for...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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06972934

ABSTRACT:
A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.

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patent: 2000-182224 (2000-06-01), None
Spin valves with synthetic ferrimagnet and antiferromagnet free and pinned layers; Veloso, A.; Freitas, P.P.; Melo, L.V.; IEEE Transactions on Magnetics, vol.: 35, Issue: 5, Sep. 1999., pp. 2568-2570.

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