Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1996-09-20
1999-12-07
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272551, 427255, 427314, C23C 1608
Patent
active
059979496
ABSTRACT:
The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.
REFERENCES:
Dutron et al, "Morphology and thermal stability of M-Si-N(M=Re, W, Ta) for microelectronics", J. Phys. IV, 5(C5, Chemical Vapour Deposition, vol. 2), C5/1141-C5/1148, 1995 No month data is available.
Pierson, "Handbook Of Chemical Vapor Deposition (CVD), Principles, Technology and Applications", Noyes Publications, 1992, pp. 61, 148-150 and 247-248, No month data is available.
Sputtered Ta-Si-N Diffusion Barriers in Cu Metallizations for Si, Kolawa et al., IEEE Electron Device Letters, vol. 12, No. 6 (jun. 1991) pp. 321-323.
Silicon Schottky Barriers and p-n Junctions with Highly Stable Aluminum Contact Metalization, Halperin et al., IEEE Electron Device Letters, vol. 12, No. 6 (jun. 1991), pp. 309-311.
Bernard Claude
Custer Jonathan S.
Fleming James G.
Jones Ronald V.
Madar Roland
California Institute of Technology
King Roy V.
Sandia Corporation
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