Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-01-31
1999-10-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117103, 117929, 423446, 427249, C30B 2516
Patent
active
059617179
ABSTRACT:
A synthesis of phosphorus-doped diamond by a microwave plasma method using a volatile hydrocarbon and hydrogen mixed therewith, as a reaction gas, wherein phosphorus is used as a dopant, and hydrogen bonded to the phosphorus is dissociated so that the phosphorus is introduced into diamond as an impurity without being bonded to hydrogen.
REFERENCES:
patent: 4806900 (1989-02-01), Fujimori et al.
patent: 5051785 (1991-09-01), Beetz, Jr. et al.
patent: 5223721 (1993-06-01), Iida et al.
patent: 5234724 (1993-08-01), Schmidt
patent: 5368897 (1994-11-01), Kurihara et al.
patent: 5400738 (1995-03-01), Shiomi et al.
patent: 5463018 (1995-10-01), Rieke
patent: 5474816 (1995-12-01), Falabella
Database WPI, Derwent Publications, AN-92-335378/41, JP-A-4-238 895, Aug. 26, 1992.
Kamo Mutsukazu
Koizumi Satoshi
Ozaki Hiroyuki
Garrett Felisa
National Institute for Research in Inorganic Materials
LandOfFree
Synthesis of phosphorus-doped diamond does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Synthesis of phosphorus-doped diamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Synthesis of phosphorus-doped diamond will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1166452