Synthesis of large homoepitaxial monocrystalline diamond

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Reexamination Certificate

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C117S068000, C423S446000

Reexamination Certificate

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11515259

ABSTRACT:
A method for producing a large homoepitaxial monocrystalline diamond. The method comprises placing at least two substrates in a substrate holder in a chemical vapor deposition (CVD) chamber. The substrates are positioned in such a manner that the growth faces of the substrates form a wedge. A diamond forming gas is provided adjacent to the substrates in the CVD chamber. The diamond forming gas is exposed to microwave radiation to generate a plasma. Then, the substrates are exposed to the plasma under such conditions that diamond growth occurs in the wedge between the substrates, to form a large homoepitaxial monocrystalline diamond.

REFERENCES:
patent: 5127983 (1992-07-01), Imai et al.
patent: 5198070 (1993-03-01), Jones
patent: 5628824 (1997-05-01), Vohra et al.
patent: 6132816 (2000-10-01), Takeuchi et al.
patent: 2004/0175499 (2004-09-01), Twitchen et al.
Chlh-Shlue Yan; Yogesh K. Vohra; Ho-Kwang Mao; Russell J. Hemley “Very High Growth Rate Chemical Vapor Deposition of Single-Crystal Diamond”Proceedings of the National Academy of Sciences of the United States of America(PNAS), vol. 99, Issue 20, p. 12523-12525,, Publication Date: Oct. 2002.

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