Synthesis of diamond single crystal from hydrogenated amorphous

Details Synthesis of diamond single crystal from hydrogenated amorphous Synthesis of diamond single crystal from hydrogenated amorphous

1996-06-28

1999-04-06

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117929, 117108, 423446, C30B 102, C30B 2904, C30B 3000

Patent

active

058912410

ABSTRACT:
Hydrogenated amorphous carbon mainly composed of sp.sup.3 structure is prepared by adding hydrogen to carbon or decomposing hydrogenated carbon gas, and then rapidly cooling the mixed or decomposed gas on a substrate. The hydrogenated amorphous carbon is irradiated with X rays to excite electrons on the 1s shells of carbon atoms. The carbon atoms are rendered to a state excited with 2.sup.+ ion due to Auger effect caused by the exciation, so as to form atomic vacancies and interlattice atomic couples. The hydrogenated amorphous carbon is then annealed, and carbon atoms are rearranged to rotated triangular pattern. Thus, diamond good of crystallinity useful as a high-temperature semiconductor device, ultraviolet laser diode or protective film can be synthesized at a relatively low temperature and a low pressure. The process is applicable for the growth of a diamond single crystal thin film on a single crystal substrate such as amorphous carbon, silicon, or a Group III-V or II-VI compound semiconductor.

REFERENCES:
patent: 4309225 (1982-01-01), Fan et al.
patent: 5154945 (1992-10-01), Baldwin et al.
patent: 5373803 (1994-12-01), Noguchi et al.
patent: 5643641 (1997-07-01), Turchan et al.

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