Synthesis method by plasma chemical vapor deposition

Details Synthesis method by plasma chemical vapor deposition Synthesis method by plasma chemical vapor deposition

1990-03-14

1992-03-03

Pianalto, Bernard

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 451, B05D 306

Patent

active

050931504

ABSTRACT:
A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.

REFERENCES:
patent: 4937094 (1990-06-01), Doehler et al.
patent: 4965090 (1990-10-01), Gartner et al.
Plasma-Enhanced Chemical Vapour Deposition of Ain Coatings on Graphite Substrates--Thin Solid Films 146 (1987) 255-264; H. Itoh, M. Kato, K. Sugiyama.

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