Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1994-07-29
1996-08-13
Langel, Wayne
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 77, 117 78, 423299, C01B 2500, C30B 1500
Patent
active
055446159
ABSTRACT:
New single crystals of ZnGeP.sub.2 are grown by a chemical vapor transport process from bulk synthesized polycrystalline ZnGeP.sub.2 using the LEK process with a controlled injection of phosphorus. The synthesis of the bulk is based on direct injection of phosphorus through a B.sub.2 O.sub.3 encapsulant and reaction with the zinc germanium melt, resulting in synthesis of a large melt (350 g) of ZnGeP.sub.2. When crystallization is followed by cooling the congruent melt down through the .alpha.-.beta. transition temperature (952.degree. C.) as is typical for bulk growth processes, the result is the growth of partially disordered material. This material is placed in a two zone heated furnace where iodine is used to transport the intermediate product to the growth zone where the single crystals grow, at a temperature below the .alpha.-.beta. phase transition. The resulting crystals produced contained a second cubic phase, which has not been reported previously.
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David F. Bliss et al, "Synthesis and growth processes for zinc germanium diphosphide," Journal of Crystal Growth 137 (1994), pp. 145-149.
H. M. Hobgood et al, "ZnGeP.sub.2 grown by the liquid encapsulated Czochralski method," J. Appl. Phys, 73(8), 15 Apr. 1993, pp. 4030-4037.
Armington Alton F.
Bliss David F.
Bryant George G.
Harris Meckie T.
Higgins William M.
Collier Stanton E.
Langel Wayne
The United States of America as represented by the Secretary of
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