Active solid-state devices (e.g. – transistors – solid-state diode – With specified dopant
Reexamination Certificate
2007-03-19
2010-10-05
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With specified dopant
C117S002000, C257SE29105
Reexamination Certificate
active
07808080
ABSTRACT:
The present invention provides a photorefractive potassium niobate (KNbO3) crystal including a first impurity added substitutionally to the niobium (Nb) site and a second impurity added substitutionally to the potassium (K) site, wherein the first and second impurities are different. There is also provided a method of making the codoped potassium niobate crystal (KNbO3) of the present invention wherein the method includes adding at least one of the impurities to a melt composition during crystal growth, adding at least one of the impurities into an existing crystal using thermal diffusion, and/or adding at least one of impurities into an existing crystal using electrically assisted diffusion.
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Cook Gary
Evans Dean R.
AFMCLO/JAZ
Menke Christopher J.
Pert Evan
The United States of America as represented by the Secretary of
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