Synchronous dynamic random access memory for burst...

Static information storage and retrieval – Addressing – Sync/clocking

Reexamination Certificate

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C365S230030

Reexamination Certificate

active

06928028

ABSTRACT:
A synchronous DRAM has cell arrays arranged in matrix, divided into banks accessed asynchronously, and n bit I/O buses for transferring data among the cell arrays. In the DRAM, the banks are divided into m blocks, the n-bit I/O buses located between adjacent banks, is used for time sharing between adjacent banks in common, the n bit I/O buses, used for time sharing between adjacent banks in common, are grouped into n/m-bit I/O buses, every n/m bits for each block of m blocks of bank, and in each block in each bank, data input/output are carried out between the n/m-bit I/O buses and data bus lines in each block. A synchronous DRAM includes a first and second internal clock systems for controlling a burst data transfer in which a string of burst data being transferred in synchronism with an external clock signal, when one of the internal clock systems is driven, the burst data transfer is commenced immediately by the selected internal clock system.

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Masao Taguchi, et al., “A 40-ns 64-Mb DRAM with 64-b Parallel Data Bus Architecture,” IEEE Journal of Solid State Circuits, No. 11, pp. 1493-1497, Nov. 26, 1991.

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