Synchronous burst extended data out DRAM

Details Synchronous burst extended data out DRAM Synchronous burst extended data out DRAM

1995-11-02

1997-09-16

Nguyen, Tan T.

Static information storage and retrieval

Addressing

Sync/clocking

3652335, G11C 800

Patent

active

056687737

ABSTRACT:
An integrated circuit memory device is described which can operate at high data speeds. The memory device can either store or retrieve data from the memory in a burst access operation. The burst operations latches a memory address from external address lines and internally generates additioned memory addresses. A clock signed is provided to synchronize the burst operations. The clock signed is independent of an address latch signal used to latch an external address.

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