Synapse MOS transistor

Details Synapse MOS transistor Synapse MOS transistor

1994-06-02

1995-08-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257365, 257393, 257401, 395 21, H01L 2980, H01L 2978

Patent

active

054422094

ABSTRACT:
A synapse MOS transistor has gate electrodes of different lengths, different widths or different lengths and widths, between one source region and one drain region. Thus, when using the synapse MOS transistor to implement a neural network, the chip area can be greatly reduced.

REFERENCES:
patent: 3652906 (1972-03-01), Christensen
patent: 4717944 (1988-01-01), Van de Wiel et al.
patent: 4969021 (1990-11-01), Thakoor et al.
patent: 5010512 (1991-04-01), Hartstein et al.
Electronics Magazine Jul. 5, 1963, p. 46, Micropower Goes International.
The Electronic Engineer Sep. 1967, p. 36, Understanding and Using the Dual-gate MOSFET, R. Dawson et al.

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