Symmetrical temperature sensor

Details Symmetrical temperature sensor Symmetrical temperature sensor

1983-12-05

1985-08-06

Envall, Jr., Roy N.

Electrical resistors

Resistance value responsive to a condition

Ambient temperature

338 22SD, 357 28, 374178, G01K 722, H01C 708, H01L 3700

Patent

active

045338981

ABSTRACT:
An electrically symmetrical temperature sensor includes two highly doped zones which are formed in a semiconductor body of one conductivity type, which are provided with connection contacts, and have the same conductivity type as that of the body. A temperature-dependent resistor is formed between the two highly doped zones. In order to avoid mechanical strains due to the temperature differences which occur during operation and which invalidate the resistance value, and in order to be able to incorporate the semiconductor body without great difficulty in simply-constructed envelopes, in particular in glass envelopes of the type frequently used for rectifier diodes, the zones of the same conductivity type are located opposite each other on opposite sides of the semiconductor body. Further, the semiconductor body comprises neutron- transmuted n-type silicon.

REFERENCES:
patent: 2953759 (1960-09-01), Lehovec
patent: 3582830 (1971-06-01), Pultorak et al.
patent: 3936789 (1976-02-01), Matzen et al.
patent: 4047436 (1977-09-01), Bernard et al.

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