Symmetrical power semiconductor device and method of fabrication

Details Symmetrical power semiconductor device and method of fabrication Symmetrical power semiconductor device and method of fabrication

1989-12-07

1990-10-16

Hille, Rolf

357 38, 357 39, 357 48, H01L 2900, H01L 2974, H01L 29747, H01L 2904

Patent

active

049639714

ABSTRACT:
The invention relates to a symmetrical power semiconductor device having peripheral connection slabs and to a method of fabricating such a device. An essentially polycrystalline P/N epitaxial layer (23) lies flush with a main face (S1) of the device by virture of grooves (21) obtained by etching and overlaid with a peripheral P/N zone (25). A P/N layer (22) is diffused between the epitaxial layer (23) and a monocrystalline N/P layer (20) in order to establish a junction (J2) which the grooves (21) and the peripheral zone (25) serve to bring out on the main face (S1). The invention is applicable to symmetrical bipolar devices, and in particular to gate-triggered thyristors.

REFERENCES:
IBM Technical Data Bulletin, vol. 21, No. 4, Sep. 1978 pp. 1518-1519, New York, A. R. Harder et al. "Gas Mixture Control Permits Nonselective Reactive Ion Etch" p. 1518, Para.2-Figures.

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