Symmetrical planar diac

Details Symmetrical planar diac Symmetrical planar diac

2007-03-13

2007-03-13

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Having only two terminals and no control electrode , e.g.,...

C257SE29215, C257SE29222, C257SE29337

Reexamination Certificate

active

10398622

ABSTRACT:
The invention concerns at disc comprising a highly-doped substrate (20) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity including in the neighbourhood of the substrate (20) a more highly-doped part (21), a highly-doped region (24) of the first type of conductivity on the side of the upper surface of the epitaxial layer, a region (23) of the second type of conductivity more doped than the epitaxial layer beneath the region (24) of the first type of conductivity and not overlapping relative thereto, a channel retaining ring (25) of the second type of conductivity more highly doped than the epitaxial layer, outside the first region, a wall (26) of the first type of conductivity outside said ring, joining the substrate.

REFERENCES:
patent: 4405932 (1983-09-01), Ishii et al.
patent: 4967256 (1990-10-01), Pathak et al.
patent: 5880511 (1999-03-01), Yu et al.
patent: 2625710 (1977-12-01), None
International Search Report from PCT priority application No. PCT/FR01/03178 filed Oct. 12, 2001.
Patent Abstracts of Japan vol. 12, No. 232 (E-628), Jun. 30, 1998 & JP 63 023359, Jan. 30, 1998.

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