Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1993-08-26
1995-01-24
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257206, 257202, H01L 2210, H01L 2702
Patent
active
053844726
ABSTRACT:
A gate array architecture is disclosed that utilizes significantly less silicon area than the prior art. The core cell includes a four transistor arrangement in which a substrate tap is located adjacent to the transistor pair. This provides for a more "symmetric" cell array than those in the prior art. Through the placement of the taps outside of the transistors the power line connections can be routed in a simple and efficient manner. The architecture includes an extension portion in the contact region of the cell to further reduce wiring complexity. In addition the gate array architecture mirrors pairs of transistor columns to allow for the sharing of substrate taps between pairs of columns. This mirroring feature further reduces routing complexity.
REFERENCES:
patent: 4924287 (1990-05-01), Orbach
patent: 4999698 (1991-03-01), Okuno et al.
Aspec Technology, Inc.
Hille Rolf
Williams Alexander Oscar
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