Symmetrical blocking high voltage semiconductor device and metho

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357 33, 357 37, H01L 2740, H01L 27120, H01L 29000

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active

050418963

ABSTRACT:
An improved symmetrical blocking high voltage semiconductor device structure incorporating a sinker region and a buried region adjacent the periphery of the chip improves device operating characteristics and simplifies device fabrication processes. A heavily doped polycrystalline refill of a trench provides a deep junction sidewall region which brings the lower high voltage blocking junction to the upper surface.

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