Patent
1989-07-06
1991-08-20
Hille, Rolf
357 33, 357 37, H01L 2740, H01L 27120, H01L 29000
Patent
active
050418963
ABSTRACT:
An improved symmetrical blocking high voltage semiconductor device structure incorporating a sinker region and a buried region adjacent the periphery of the chip improves device operating characteristics and simplifies device fabrication processes. A heavily doped polycrystalline refill of a trench provides a deep junction sidewall region which brings the lower high voltage blocking junction to the upper surface.
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Arthur Stephen D.
Gray Peter V.
Temple Victor A. K.
Brown Peter Toby
Davis Jr. James C.
General Electric Company
Hille Rolf
Snyder Marvin
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