Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1988-06-20
1989-04-25
Mottola, Steven
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330264, H03F 316
Patent
active
048251747
ABSTRACT:
A symmetric integrated FET amplifier is disclosed which exhibits a DC offset voltage that is insensitive to power supply variations, as well as variations in the threshold voltages of the FETs forming the amplifier. These variations are known to be most prevalent in InP-based FET amplifier arrangements. The symmetry is achieved by using a pair of impedance matching elements in the input stage of the amplifier to essentially match the impedance of the input FET and its load element, and a matching buffer FET and diode level shifting arrangement are used to match similar elements present in the output branch of the amplifier structure. The impedance matching elements, as well as the level shifting diodes, may all be formed with FET structures to minimize fabrication problems. In accordance with the symmetric arrangement of the present invention, the output DC offset voltage will be maintained at zero volts, regardless of the variations noted above. A multistage symmetric amplifier may then be formed simply by directly connecting a number of single stage symmetric amplifiers together in series.
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Broad-Band Medium-Power Amplification in the 2-12.4-GHz Range with GaAs MESFET's, IEEE Transactions on Microwave Theory and Techniques, vol. MTT-24, No. 6, Jun. 1976, Derry P. Hornbuckle and Louis J. Kuhlman, Jr.
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Monolithic GaAs Direct-Coupled Amplifiers, Derry P. Hornbuckle, IEEE Transactions on Electron Devices, vol. ED-28, No. 2, Feb. 1981.
American Telephone and Telegraph Company AT&T Bell Laboratories
Koba Wendy W.
Mottola Steven
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