Symmetric bipolar junction transistor design for deep...

Details Symmetric bipolar junction transistor design for deep... Symmetric bipolar junction transistor design for deep...

2006-09-22

2008-10-21

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

C438S309000

Reexamination Certificate

active

07439608

ABSTRACT:
Described herein are embodiments of a bipolar junction transistor including a plurality of base terminal rings having an emitter terminal ring between any two base terminal rings of the plurality of base terminal rings, and a collector terminal ring surrounding the plurality of base terminal rings and the emitter terminal ring and methods of manufacturing the same.

REFERENCES:
patent: 3935587 (1976-01-01), Ostop et al.
patent: 5528064 (1996-06-01), Thiel et al.
patent: 5541439 (1996-07-01), Mojaradi et al.
patent: 5605850 (1997-02-01), Villa
patent: 5614424 (1997-03-01), Wong et al.
PCT/US2007/020289 Sep. 19, 2007 International Search Report.

Affiliated with

Also associated with

Rating

Symmetric bipolar junction transistor design for deep... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Symmetric bipolar junction transistor design for deep..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Symmetric bipolar junction transistor design for deep... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4000346