Symmetric bidirectional silicon-controlled rectifier

Details Symmetric bidirectional silicon-controlled rectifier Symmetric bidirectional silicon-controlled rectifier

2011-03-29

2011-03-29

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S124000, C257S360000, C257SE29221

Reexamination Certificate

active

07915638

ABSTRACT:
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a second well, which are sequentially formed on the buried layer side-by-side; a first semiconductor area and a second semiconductor area both formed inside the first well; a third semiconductor area formed in a junction between the first well and the middle region, wherein a first gate is formed over a region between the second and third semiconductor areas; a fourth semiconductor area and a fifth semiconductor area both formed inside the second well; a sixth semiconductor area formed in a junction between the second well and the middle region, wherein a second gate is formed over a region between the fifth and sixth semiconductor areas.

REFERENCES:
patent: 5072273 (1991-12-01), Avery
patent: 5877534 (1999-03-01), Williams et al.
patent: 6258634 (2001-07-01), Wang et al.
patent: 6365924 (2002-04-01), Wang et al.
patent: 6960792 (2005-11-01), Nguyen
patent: 7034363 (2006-04-01), Chen
patent: 7145187 (2006-12-01), Vashchenko et al.

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