Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-04-26
2005-04-26
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S398000
Reexamination Certificate
active
06885014
ABSTRACT:
Ion implantation systems and beamlines therefor are disclosed, in which a ribbon beam of a relatively large aspect ratio is mass analyzed and collimated to provide a mass analyzed ribbon beam for use in implanting one or more workpieces. The beamline system comprises two similar magnets, where the first magnet mass analyzes the ribbon beam to provide an intermediate mass analyzed ion beam, and the second magnet collimates the intermediate beam to provide a uniform mass analyzed ribbon beam to an end station. The symmetrical system provides equidistant beam trajectories for ions across the elongated beam width so as to mitigate non-linearities in the beam transport through the system, such that the resultant mass analyzed beam is highly uniform.
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Axcelis Technologies Inc.
Eschweiler & Associates LLC
Nguyen Kiet T.
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