Switching semiconductor device and switching circuit

Details Switching semiconductor device and switching circuit Switching semiconductor device and switching circuit

2006-06-20

2006-06-20

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S011000, C257S024000, C257S027000, C257S130000, C257S131000, C257S143000, C257S149000, C257S151000, C257S153000, C257S154000, C257S155000, C257S160000, C257S161000, C257S194000, C257S195000, C257S918000

Reexamination Certificate

active

07064359

ABSTRACT:
A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the first compound layer, and including a general formula InyALzGa1-y-zN, where 0≦y≦1 and 0<z≦1; and a gate electrode formed on the second compound layer. The gate electrode is electrically connected to a resistance element formed on a first interlayer insulating film that covers the gate electrode, through a metal wiring formed on a second interlayer insulating film that covers the first interlayer insulating film.

REFERENCES:
patent: 4481521 (1984-11-01), Okumura
patent: 2002/0052076 (2002-05-01), Khan et al.
patent: 2002/0121647 (2002-09-01), Taylor
patent: 2003/0020091 (2003-01-01), Tungare et al.
patent: 2003/0034545 (2003-02-01), Johnson et al.
patent: 2003/0036213 (2003-02-01), Brophy
patent: 2004/0070003 (2004-04-01), Gaska et al.
patent: 2004/0150043 (2004-08-01), Holm et al.
patent: 2004/0173816 (2004-09-01), Saxler
patent: 2005/0167775 (2005-08-01), Nagy et al.
patent: 9-246471 (1997-09-01), None
Miyatsuji, Kazuo., et al. “A GaAs High Power RF Single Pole Dual Throw Switch IC for Digital Mobile Communication System.” IEEE Journal of Solid State Circuits, vol. 30, No. 9, Sep. 1995, pp. 979-983.

Affiliated with

Also associated with

Rating

Switching semiconductor device and switching circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Switching semiconductor device and switching circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Switching semiconductor device and switching circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3636540