Switching point detection circuit and semiconductor device...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Having specific delay in producing output waveform

Reexamination Certificate

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Details

C327S080000, C327S081000, C327S278000

Reexamination Certificate

active

07034598

ABSTRACT:
A switching point detection circuit for detecting a switching point according to a fabrication condition of a MOS transistor includes a reference voltage generation circuit for generating a reference voltage, a first CMOS inverter circuit for receiving the reference voltage, and a second CMOS inverter circuit for receiving the reference voltage, wherein an NMOS transistor is a dominant transistor for the reference voltage in the first CMOS inverter circuit and a PMOS transistor is a dominant transistor for the reference voltage in the second CMOS inverter circuit.

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Notice of Preliminary Rejection for Korean patent application 2002-37278 dated Mar. 31, 2004, issued by the Korean Intellectual Property Office.

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