Switching element with organic insulative region

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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365153, 257 40, H01L 2714

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active

051702380

ABSTRACT:
A switching element is disclosed which comprises an element comprising two electrodes and an organic insulative region interposed between said two electrodes. The element has a memory property and is capable of being switched between different resistance states upon the application of a predetermined voltage. The switching element also comprises a photosensitive region which has an electrical property which is changed by irradiation of light. The photosensitive region is arranged to change a magnitude of voltage applied to the element. The switching device also comprises a means for applying a biasing voltage to the element and the photosensitive region. This biasing voltage is of such a magnitude as to initiate one of the resistance states in said element, having the memory property when light is irradiated on the photosensitive region.

REFERENCES:
patent: 3833894 (1974-09-01), Aviram et al.
patent: 4731756 (1988-03-01), Potember et al.
patent: 4876585 (1989-10-01), Ozawa
patent: 4969025 (1990-11-01), Yamamoto et al.
Thin Solid Films, vol. 149, No. 2, May 25, 1987, pp. 163-170, Y. L. Hua, et al: "photoelectric properties of substituted silicon phthalocyanine langmuir-blodgett film Schottky barrier and metal/insulator/semiconductor devices".
Electronics International, vol. 55, No. 15, Jul. 1982, pp. 47-48, R. Connolly: "Light, electric pulses switch organic films".
Applied Physics Letters, vol. 41, No. 6, Sep. 1982, pp. 548-550, R. S. Potember, et al.: "Optical switching in semiconductor organic thin films".

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