Switching element with memory provided with Schottky tunnelling

Details Switching element with memory provided with Schottky tunnelling Switching element with memory provided with Schottky tunnelling

1994-12-20

1996-04-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257476, 365145, 365174, H01L 27095, G11C 1122

Patent

active

055127738

ABSTRACT:
A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier for electrons during operation. It is desirable in many applications for the switching element to hold a certain switching state, such as open or closed, during a longer period. The switching element may then be used, for example, as a memory element. The dielectric (3) includes a ferroelectric material with a remanent polarization which influences a dimension of the tunnelling barrier. In this manner the switching element has various switching states depending on the remanent polarization of the dielectric (3). These switching states are held until the polarization of the dielectric (3) changes.

REFERENCES:
patent: 3623030 (1971-11-01), Sawyer
patent: 5206829 (1993-04-01), Thakoor et al.
"Nonvolatile Schottky Diode With Barrier Height Controlled by Ferroelectric Polarization", IBM Technical Disclosure Bulletin, vol. 14, No. 4, Sep. 1971, pp. 1250-1251.

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