Switching element, switching element fabriction method,...

Details Switching element, switching element fabriction method,... Switching element, switching element fabriction method,...

2011-06-21

2011-06-21

Nguyen, Thinh T (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S044000

Reexamination Certificate

active

07964867

ABSTRACT:
The switching element of the present invention includes an ion conduction layer (40) capable of conducting metal ions, a first electrode (21) and a second electrode (31) provided in contact with the ion conduction layer (40), and a third electrode (35) provided in contact with the ion conduction layer (40) and capable of supplying metal ions, and is of a configuration in which the area over which the first electrode (21) contacts the ion conduction layer (40) is smaller than the area over which the second electrode (31) contacts the ion conduction layer (40). The use of this configuration decreases the leak current in the OFF state.

REFERENCES:
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 2002/0168820 (2002-11-01), Kozicki et al.
patent: 2001-525606 (2001-12-01), None
patent: 2002-536840 (2002-10-01), None
patent: 2003-92387 (2003-03-01), None

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