Switching element driving device and switching element...

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific current responsive fault sensor

Reexamination Certificate

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C361S093200, C361S093700, C361S093900, C361S079000

Reexamination Certificate

active

07933105

ABSTRACT:
A switching element driving device has a first transistor that decreases the gate voltage of a power element at a faster rate than during a normal turn-off, and a second transistor that decreases the gate voltage of the power element at a slower rate than during a normal turn-off. If the gate voltage detected by the gate voltage monitoring means when an overcurrent in the power element is detected by overcurrent detection means is greater than a predetermined value, the gate voltage is decreased by the first transistor, and then, while the power element remains on, the gate voltage is decreased by the second transistor. If the gate voltage detected by the gate voltage monitoring means when an overcurrent in the power element is detected by overcurrent detection means is less than or equal to the predetermined value, the gate voltage is decreased only by the second transistor.

REFERENCES:
patent: 6057728 (2000-05-01), Igarashi
patent: 2002/0070772 (2002-06-01), Neacsu et al.
patent: 0 817 381 (1998-01-01), None
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patent: A-2003-248318 (2003-10-01), None
patent: A-2005-006381 (2005-01-01), None
patent: B-3649154 (2005-02-01), None
patent: A-2006-109286 (2006-04-01), None
Masahiro Kimata, Semiconductor device drive circuit, Publication Date: Jul. 1, 1998, Drawing 14, col. 23 and col. 24.
G. Castino, et al.: International Rectifier Corporation, Application Notes AN-984J, circa 1990.

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