Switching element

Details Switching element Switching element

2004-08-12

2010-10-05

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE45002, C257SE51025, C438S099000

Reexamination Certificate

active

07807991

ABSTRACT:
A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticle and the organic bistable compound.

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R. S. Potember et al. “Electrical switching and memory phenomena in Cu-TCNQ thin films” Appl. Phys. Lett., 34 (1979), p. 405-407.
Tsujioka Tsuyoshi et al: “Organic bistable molecular memory using photochromic diarylethene” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 83, No. 5, Aug. 4, 2003, pp. 937-939.

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