Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-05-03
2011-05-03
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C257SE29003, C438S102000, C438S103000, C365S163000, C361S435000
Reexamination Certificate
active
07935949
ABSTRACT:
A switching device with a solid electrolyte layer includes: a substrate; a lower electrode formed over the substrate; a solid electrolyte layer disposed over the lower electrode; and an upper electrode formed over the solid electrolyte layer.
REFERENCES:
patent: 6294111 (2001-09-01), Shacklett et al.
patent: 6301039 (2001-10-01), Tench
patent: 1020070075812 (2007-07-01), None
patent: 1020100004363 (2010-01-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Oct. 26, 2010.
Hynix / Semiconductor Inc.
IP & T Group LLP
Smith Bradley K
Valentine Jami M
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