Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-02-07
2006-02-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S032000, C257S033000, C257S034000, C257S035000, C257S036000
Reexamination Certificate
active
06995390
ABSTRACT:
A switching device has an S (Superconductor)-N (Normal Metal)-S superlattice to control the stream of electrons without any dielectric materials. Each layer of said Superconductor has own terminal. The superlattice spacing is selected based on “Dimensional Crossover Effect”. This device can operate at a high frequency without such energy losses as devices breaking the superconducting state. The limit of the operation frequency in the case of the Nb/Cu superlattice is expected to be in the order of 1018Hz concerning plasmon loss energy of the normal metals (Cu; in the order of 103eV).
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Brook, Esq. Mitchell P.
Louie Wai-Sing
Luce Forward Hamilton & Scripps LLP
Pham Long
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