Switching device using superlattice without any dielectric...

Details Switching device using superlattice without any dielectric... Switching device using superlattice without any dielectric...

2011-04-12

2011-04-12

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

C257S032000, C257S036000, C257S135000, C257S242000, C257SE39017, C438S002000

Reexamination Certificate

active

07923717

ABSTRACT:
A switching device has an S (Superconductor)-N (Normal Metal)-S superlattice to control the stream of electrons without any dielectric materials. Each layer of said Superconductor has own terminal. The superlattice spacing is selected based on “Dimensional Crossover Effect”. This device can operate at a high frequency without such energy losses as devices breaking the superconducting state. The limit of the operation frequency in the case of the Nb/Cu superlattice is expected to be in the order of 1018Hz concerning plasmon loss energy of the normal metals (Cu; in the order of 103eV).

REFERENCES:
patent: 7314765 (2008-01-01), Tsukui

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