Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-02-06
2011-10-11
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S005000, C257S043000, C257SE45003, C365S148000
Reexamination Certificate
active
08035096
ABSTRACT:
A switching device according to the present invention includes ion conductive layer23containing titanium oxide, first electrode21provided in contact with ion conductive layer23, and second electrode22provided in contact with ion conductive layer23and which can supply metal ions to ion conductive layer23.
REFERENCES:
patent: 2003/0053350 (2003-03-01), Krieger et al.
patent: 2005/0242337 (2005-11-01), Roehr et al.
patent: 2005/0286211 (2005-12-01), Pinnow et al.
patent: 2007/0007579 (2007-01-01), Scheuerlein et al.
patent: 2007/0285148 (2007-12-01), Sakamoto et al.
patent: 1501124 (2005-01-01), None
patent: 06-028841 (1994-02-01), None
patent: 2000-512058 (2000-09-01), None
patent: 2001-525606 (2001-12-01), None
patent: 2002-536840 (2002-10-01), None
patent: 2003-092387 (2003-03-01), None
patent: 03/028124 (2003-04-01), None
patent: 03/094227 (2003-11-01), None
patent: 2005/117026 (2005-12-01), None
Ssenyange et al., Redox-Driven Conductance Switching via Filament Formation and Dissolution in Carbon/Molecule/TiO2/Ag Molecular Electronic Junctions, Langmuir 2006, 22, 10689-10696.
T. Sakamoto et al, “Nanometer-scale switches using copper sulfide”, Applied Physics Letters, pp. 3032-3034, May 5, 2003, vol. 82, No. 18.
T. Sakamoto et al., “A Nonvolatile Programmable Solid Electrolyte Nanometer Switch”, IEEE Internatioanl Solid-State Circuits Conference, 2004, pp. 290-291.
S. Kaeriyama et al., A Nonvolatile Programmable Solid-Electrolyte Nanometer Switch, IEEE Journal of Solid-State Circuits, Jan. 2005, pp. 168-176, vol. 40, No. 1.
H. Namatsu et al., “Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations”, J. Vac. Sci. Technol. B 16(1), Jan./Feb. 1998, pp. 69-76.
Lulis Michael
NEC Corporation
Phung Anh
Sughrue & Mion, PLLC
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