Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-01-27
2008-08-26
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S029000, C438S034000, C438S151000, C257S290000
Reexamination Certificate
active
07417254
ABSTRACT:
The invention discloses a switching devise for a pixel electrode of display devise and methods for fabricating the same. A gate is formed on a portion of a substrate. A semiconductor layer is formed on the gate. A source and a drain are formed on a portion of the semiconductor layer. A low-k (low dielectric constant) materia layer, such as a layer of a-SiC:H or a-SiCN:H, is formed between the gate and the semiconductor layer and/or on the source/ drain.
REFERENCES:
patent: 7030012 (2006-04-01), Divakaruni et al.
patent: 7309895 (2007-12-01), Hoffman et al.
patent: 2003/0134505 (2003-07-01), Dalton et al.
patent: 2004/0185668 (2004-09-01), Morita et al.
patent: 2005/0148143 (2005-07-01), Yang et al.
patent: 2006/0139342 (2006-06-01), Yu
CN Office Action mailed Apr. 13, 2007.
Fang Kuo-Lung
Lin Han-Tu
Tsai Wen-Ching
AU Optronics Corp.
Picardat Kevin M
Thomas, Kayde, Horstemeyer & Risley
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