Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-10-11
2008-08-12
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S412000, C257S608000, C257S762000
Reexamination Certificate
active
07411212
ABSTRACT:
The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.
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China Office Action mailed Jan. 12, 2007.
Fang Kuo-Lung
Lee Yeong-Shyang
Lin Han-Tu
Tsai Wen-Ching
AU Optronics Corp.
Luu Chuong A.
Thomas Kayden Horstemeyer & Risley
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