Switching device, drive and manufacturing method for the...

Details Switching device, drive and manufacturing method for the... Switching device, drive and manufacturing method for the...

2011-08-23

2011-08-23

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S008000

Reexamination Certificate

active

08003969

ABSTRACT:
Provided is a switching device including ion conducting part4having an ion conductor, first electrode1formed at a first gap away from ion conducting part4,second electrode2formed to be in contact with ion conducting part4and third electrode3formed at a second gap away from ion conducting part4.Second electrode2supplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.

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patent: WO 03/094227 (2003-11-01), None
T. Sakamoto et al., “A nonvolatile programmable solid electrolyte nanometer switch”, Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International, 2004, pp. 290-291.
T. Sakamoto et al., “Nanometer-scale switches copper Sulfide”, Applied Physics Letters, 2003, vol. 82, No. 18, pp. 3032 to 3034.

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