Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-01-04
2011-01-04
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE47001, C365S153000
Reexamination Certificate
active
07863594
ABSTRACT:
An objective of the present invention is to provide a switching device that shows two markedly different stable resistance characteristics reversibly and repetitively, and which is applicable to highly integrated nonvolatile memories.The present invention provides a switching device, which comprises a variable resistor element that has, between two electrodes, a metal-oxide thin-film comprising a single central metal element with a compositional variation; which is connected to a control circuit which can apply, between said two electrodes, a voltage or a current selected from among a voltage or a current of the first threshold or higher, a voltage or a current of the second threshold or lower whose absolute value is smaller than the absolute value of said first threshold, and a voltage or a current of the third threshold or lower whose absolute value is smaller than the absolute value of said second threshold; and in which the interelectrode resistance characteristic reversibly changes by a factor of 1,000 to 10,000 in the voltage or current region whose absolute value is equal to or below the third threshold.
REFERENCES:
patent: 2008/0054243 (2008-03-01), Shima et al.
patent: P2004-363604 (2004-12-01), None
patent: P2002-537627 (2005-11-01), None
patent: WO 2006/028117 (2006-03-01), None
International Preliminary Report on Patentability for PCT/JP2006/315629.
Gibbons, et al., “Switching properties of thin Ni0 films”Solid State Electronics, 1964; 7 (11): 785-97.
Liu, et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”Applied Physics Letters, May 8, 2000; 76 (19): 2749-51.
Akinaga Hiroyuki
Inoue Isao
Takagi Hidenori
Yasuda Shuichiro
Dickey Thomas L
Medlen & Carroll LLP
National Institute of Advanced Industrial Science and Technology
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