Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-05-29
2000-08-15
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 257348, 257349, 349 48, 349 42, 349 43, H01L 2904
Patent
active
06104041&
ABSTRACT:
In an active matrix electroluminescent display, a pixel containing a electroluminescent cell and the switching electronics for the electroluminescent cell where said switching electronics contains two transistors, a low voltage MOS transistor and a high voltage MOS transistor. A low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. The gate charge is stored between the gate electrode of the high voltage transistor and an electric field shield forming a pixel signal capacitor. The pixel signal capacitor is positioned within the layout of the pixel a distance from the drain of the high voltage MOS transistor.
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Hsueh Fu-Lung
Ipri Alfred Charles
Abraham Fetsum
Burke William J.
Sarnoff Corporation
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