Switching circuit with MOS field effect transistor

Details Switching circuit with MOS field effect transistor Switching circuit with MOS field effect transistor

1979-12-17

1982-01-26

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, 330264, 330298, H03F 318, H03K 17687

Patent

active

043130658

ABSTRACT:
A switching circuit with MOS field effect transistors includes a DC voltage source having first and second terminals, first and second MOS field effect transistors each having gate, source, drain electrodes and a substrate, a circuit for connecting the source and drain electrodes of the first and second field MOS effect transistors in push-pull amplifying relation between the first and second terminals of the DC voltage source, a signal input circuit for supplying a signal to drive the gate electrodes of the first and second MOS field effect transistors, an output circuit including an inductor and a load connected in series between the connection point of the first and second MOS field effect transistors and a reference point so that charging and discharging currents of the inductor flow alternately through the source and drain electrodes of each of the first and second MOS field effect transistors when the respective MOS field effect transistors are in their conductive state, and resistors connected between the source electrodes and the substrates of the first and second MOS field effect transistors such that the discharging current of the inductor is prevented from flowing through the respective substrates of the first and second MOS field effect transistors.

REFERENCES:
patent: 4021748 (1977-05-01), Yoshida et al.
patent: 4209713 (1980-06-01), Satou et al.
Evans et al., "Higher Power Ratings Extend V-MOS FETs' Dominion", Electronics, pp. 105-112; 6/1978.

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