Switching circuit having two MOS-FETS

Details Switching circuit having two MOS-FETS Switching circuit having two MOS-FETS

2006-08-08

2008-11-18

Luu, An T (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

C327S381000, C327S383000

Reexamination Certificate

active

07453310

ABSTRACT:
A switching circuit of the present invention can be advantageously used in an electronic control unit mounted on an automotive vehicle. The switching circuit is constituted by a pair of P-channel MOS-FETs connected in series between an input terminal and an output terminal. Sources of both MOS-FETs are connected to a common source junction and gates thereof are connected to a common gate junction. A Zener diode connected between the common source junction and the common gate junction is used for protecting the MOS-FETs. A resistor is connected in parallel to the Zener diode to bring the switching circuit to a non-conductive state when the gate voltage at the common gate junction becomes indefinite and a high voltage is supplied to the output terminal. In place of the resistor, an additional P-channel MOS-FET may be used in the switching circuit to bring the switching circuit to the non-conductive state when the voltage at the common gate junction becomes indefinite.

REFERENCES:
patent: 5550497 (1996-08-01), Carobolante
patent: 6304208 (2001-10-01), Nagashima
patent: 6768228 (2004-07-01), Fial et al.
patent: A-6-97428 (1994-04-01), None
patent: A-2002-43434 (2002-02-01), None

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