Switching circuit for controlled transition between high program

Details Switching circuit for controlled transition between high program Switching circuit for controlled transition between high program

1996-10-03

1998-06-30

Nguyen, Viet Q.

Static information storage and retrieval

Powering

36518524, 36518518, 36518526, 36518909, G11C 702

Patent

active

057744068

ABSTRACT:
A switching circuit is disclosed herein which prevents an unwanted forward biasing of P/N junctions therein while allowing voltages exceeding the supply voltage to be provided in a precise manner to such floating gate memory cells. In accordance with the present invention, a switching circuit includes a first stage which effectively isolates programming voltages from supply voltages during programming and erasing operations, thereby allowing program and erase voltages exceeding supply voltage to be provided to an associated memory array. The switching circuit includes a second stage which prevents the unwanted forward-biasing of P/N junctions within the switch and its associated memory array by controlling the discharge rate of internal node when transitioning from either a programming or erasing operation to a read operation.

REFERENCES:
patent: 5495453 (1996-02-01), Wociechowski et al.
patent: 5511022 (1996-04-01), Yim et al.
patent: 5579274 (1996-11-01), Van Buskirk et al.

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