Switching circuit device

Details Switching circuit device Switching circuit device

2005-07-05

2005-07-05

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S277000, C257S664000, C257S725000, C257S726000, C257SE29116, C257S155000, C257S160000, C333S247000

Reexamination Certificate

active

06914280

ABSTRACT:
Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The switching device also includes a protecting element that has a first n+-type region, an insulating region and a second n+-type region. This protecting element is connected in parallel between two electrodes of the shunt FET. Since electrostatic charges are discharged between the first and second n+-type regions, the electrostatic energy reaching an operation region of the shunt FET can be reduced without an increase in parasitic capacitance.

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