Switching circuit arrangement

Details Switching circuit arrangement Switching circuit arrangement

2007-05-14

2010-12-14

Wells, Kenneth B. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

C327S318000, C327S319000, C327S320000

Reexamination Certificate

active

07852125

ABSTRACT:
A switching circuit arrangement includes a field effect transistor and circuitry for biasing the gate voltage of the field effect transistor, e.g., forcing the gate voltage of the field effect transistor under a certain threshold. Reverse recovery and gate bounce are simultaneously mitigated. The biasing circuitry includes a biasing diode connected in series to the gate of the field effect transistor to bias the gate voltage of the field effect transistor. A clamping field effect transistor unit is connected between the gate of the field effect transistor and the source of the field effect transistor to force the gate voltage of the field effect transistor under a certain threshold.

REFERENCES:
patent: 4438356 (1984-03-01), Fleischer
patent: 4492883 (1985-01-01), Janutka
patent: 4634903 (1987-01-01), Montorfano
patent: 4970420 (1990-11-01), Billings
patent: 5276370 (1994-01-01), Nishiura et al.
patent: 5281862 (1994-01-01), Ma
patent: 5475329 (1995-12-01), Jones et al.
patent: 5506539 (1996-04-01), Kelly et al.
patent: 5612582 (1997-03-01), Shichi et al.
patent: 5929690 (1999-07-01), Williams
patent: 6127746 (2000-10-01), Clemente
patent: 6421262 (2002-07-01), Saxelby et al.
patent: 6819149 (2004-11-01), Shirasawa et al.
patent: 7113412 (2006-09-01), Shao et al.
patent: 7439636 (2008-10-01), Lewis
patent: 2005/0047177 (2005-03-01), Tobita
patent: 2351860 (2001-01-01), None
patent: 2004114509 (2004-12-01), None
patent: 2005091502 (2005-09-01), None
Elferich R et al: “Impact of Gate Voltage Bias on Reverse Recovery Losses of Power MOSFETs” Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE Mar. 19, 2006, pp. 1390-1395, XP010910127 ISBN: 0-7803-9547-6.
Thomas Duerbaum, et al: Quantification of Switching Loss Contributions in Synchronous Rectifier Applications, 10th European Conf. on Power Electronics and Applications EPE, Sep. 2003, paper 786.
G.M. Dolny, et al: The Influence of body effect and treshold voltage reduction on trench MOSFETN body diode characteristics, ISPSD 2004, pp. 217-220.
Thomas Duerbaum, et al: Third Quadrant Output Characteristics in High Density Trench MOSFETs, 11th International Power Electronics and Motion Control Conf. EPE-PEMC, Sep. 2004, Riga, Latvia, paper A14370.
Philip Rutter: Challenges of integrated Power Trains, Intel Symposium 2004.
PIP212-12M Oct. 24, 2006 http://www.semiconductors.philips.com/pip/PIP212-12M.html.

Affiliated with

Also associated with

Rating

Switching circuit arrangement does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Switching circuit arrangement, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Switching circuit arrangement will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4167311