Switching arrangement for an RF GTO

Electrical transmission or interconnection systems – With nonswitching means responsive to external nonelectrical... – Temperature responsive

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307263, 363135, H03K 1772

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active

052372251

ABSTRACT:
A switching arrangement for an RF-GTO is specified. It comprises a latching-type semiconductor component (GTO) of familiar construction. The circuit for turning off the semiconductor component (GTO) is designed in such a manner that the turn-off gain I.sub.A /I.sub.G, peak is distinctly less than 3 and, in particular, less than or equal to 1. During the turning-off, the drive is hard, that is to say has a high rate of increase dI.sub.G /dt and high current. A capacitance (C.sub.p) is connected directly in parallel with the semiconductor component (GTO).

REFERENCES:
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patent: 4612561 (1986-09-01), Kimura et al.
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patent: 5031088 (1991-07-01), Tanaka
patent: 5051603 (1991-09-01), Walker
Industry Applications Society, IEEE-IAS-1985 Annual Meeting, 1985, 6 pages, A. P. Connolly, et al., "Application of GTO Thyristor Modules".
"Two New GTO Modules for Drive Applications", by D. Eisele, et al., pp. 519-525, 73, No. 9, Sep. 1986.

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