Switched bitline VTH sensing for non-volatile memories

Details Switched bitline VTH sensing for non-volatile memories Switched bitline VTH sensing for non-volatile memories

2007-05-03

2011-11-15

Tran, Andrew Q (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185200, C365S185250, C365S185030

Reexamination Certificate

active

08059468

ABSTRACT:
A transistor provides a voltage source commonly switched by SE and SO switches to pre-charge both the even bitline and the odd bitline. The SE and SO switches are open during a sensing stage to determine whether the cell side or the reference side has a higher current and determine the charge stored by a memory cell transistor.

REFERENCES:
patent: 5337270 (1994-08-01), Kawata et al.
patent: 5412606 (1995-05-01), Lee
patent: 6847533 (2005-01-01), Regev et al.
patent: 6882561 (2005-04-01), Kwon et al.
patent: 7590017 (2009-09-01), Romanovskyy et al.

Affiliated with

Also associated with

Rating

Switched bitline VTH sensing for non-volatile memories does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Switched bitline VTH sensing for non-volatile memories, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Switched bitline VTH sensing for non-volatile memories will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4280303