Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-01-13
2009-10-27
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000
Reexamination Certificate
active
07608467
ABSTRACT:
A switchable resistive device has a multi-layer thin film structure interposed between an upper conductive electrode and a lower conductive electrode. The multi-layer thin film structure comprises a perovskite layer with one buffer layer on one side of the perovskite layer, or a perovskite layer with buffer layers on both sides of the perovskite layer. Reversible resistance changes are induced in the device under applied electrical pulses. The resistance changes of the device are retained after applied electric pulses. The functions of the buffer layer(s) added to the device include magnification of the resistance switching region, reduction of the pulse voltage needed to switch the device, protection of the device from being damaged by a large pulse shock, improvement of the temperature and radiation properties, and increased stability of the device allowing for multivalued memory applications.
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Chen Xin
Ignatiev Alex
Wu Naijuan
Board of Regents University of Houston
Gardere Wynne & Sewell LLP
Lechne-Fish Teresa
Lee Calvin
Sickler Jennifer
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