Switchable resistive memory with opposite polarity write pulses

Details Switchable resistive memory with opposite polarity write pulses Switchable resistive memory with opposite polarity write pulses

2005-07-11

2008-09-16

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

C365S148000, C365S163000

Reexamination Certificate

active

07426128

ABSTRACT:
A rewriteable nonvolatile memory includes a thin film transistor and a switchable resistor memory element in series. The switchable resistor element decreases resistance when subjected to a set voltage magnitude applied in a first direction, and increases resistance when subjected to a reset voltage magnitude applied in a second direction opposite the first. The memory cell is formed in an array, such as a monolithic three dimensional memory array in which multiple memory levels are formed above a single substrate. The thin film transistor and a switchable resistor memory element are electrically disposed between a data line and a reference line which are parallel. A select line extending perpendicular to the data line and the reference line controls the transistor.

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